Dresden 2006 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 5: SiC

HL 5.2: Vortrag

Montag, 27. März 2006, 12:30–12:45, BEY 154

Electronic properties of the 2x1 3C-SiC surface reconstruction studied with resonant photoemission — •Massimo Tallarida, Rakesh Sohal, and Dieter Schmeisser — Angewandte Physik-Sensorik, Brandenburgische Technische Universität, Konrad Wachsmann Allee, 17-03046-Cottbus

We have studied the 2x1 reconstructed surface of the 3C-SiC polytype by means of photoemission spectroscopy. The reconstruction was characterized through Si2p and C1s core level and angle-integrated valence band spectroscopy, and confirmed by the observation of a two-domain 2x1 LEED pattern. The electronic properties of this surface were investigated by collecting valence band spectra at photon energies near the Si2p and C1s absorption edges. The results show a strong dependence of the photoemission intensity on the excitation energy with characteristic resonances for certain valence band features. With a detailed study of the resonances we are able to assign the electronic origin of the resonating states and the nature of the electronic transition near the absorption edges.