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HL: Halbleiterphysik

HL 50: Poster II

HL 50.100: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Lattice parameters of CuAu- and chalcopyrite-phase of epitaxial CuInS2 on silicon substrates — •Janko Cieslak¹, Thomas Hahn¹, Jürgen Kräußlich², Heiner Metzner¹, Jens Eberhardt¹, Mario Gossla¹, Udo Reislöhner¹, and Wolfgang Witthuhn¹ — ¹Institut für Festkörperphysik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena — ²Institut für Optik und Quantenelektronik, Friedrich Schiller Universität Jena, Max-Wien-Platz 1, 07743 Jena

Epitaxial thin films of CuInS2 (CIS) were grown on Si(111) and Si(100) substrates using molecular beam epitaxy from elemental sources. Their lattice parameters were measured by means of x-ray diffraction at the European Synchrotron Radiation Facility in Grenoble in reflection as well as transmission geometry, respectively. The epitaxial films show a coexistence of the CuAu- and the chalcopyrite-phase with different lattice constants and tetragonal distortions. The volume fractions of both phases were determined. The lattice parameters for both substrate orientations are compared with values of single crystals and discrepancies and their implications for CIS thin film growth are discussed.