Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.101: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Hillock formation in epitaxial Cu(In,Ga)S2 thin films — •Thomas Hahn, Janko Cieslak, Jens Eberhardt, Mario Gossla, Heinrich Metzner, Udo Reislöhner, Kristian Schulz, and Wolfgang Witthuhn — Friedrich-Schiller-Universität Jena, Institut für Festkörperphysik, Max-Wien-Platz 1, 07743 Jena, Germany

Epitaxial thin films of the ternary chalcopyrite semiconductor Cu(In,Ga)S2 are grown epitaxially on Si substrates by molecular beam epitaxy from elemental sources. The samples are analyzed according to their morphological and structural properties utilizing electron diffraction, Rutherford backscattering spectroscopy, and atomic force microscopy. A strong tendency for the formation of hillocks, achieving heights of nearly a magnitude larger as compared to the underlying film thickness, is observed. The influences of deposition parameters and metastabilities during film growth on the occurence of these hillocks are investigated. The possibility of hillock formation being due to internal stresses during film growth is discussed.