Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.102: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

2. A comparative photoluminescence study on CuInS2 absorber layers for solar cell applications from a rapid thermal process and from RF reactive sputtering — •Tobias Enzenhofer, Thomas Unold, Klaus Ellmer, and Hans-Werner Schock — Hahn-Meitner-Institut, Glienicker Strasse 100, 14109 Berlin

This contribution reports detailed temperature and intensity dependent photoluminescence measurements on CuInS2 thin films deposited by RF reactive sputtering and from a rapid thermal process and relates several commonalities and differences in the defect structure of the films prepared by the two different techniques. First, we compare the various luminescence transitions in absorber layers from reactive sputtering and from a rapid thermal process. Second, we propose a model concerning the role of the deep level luminescence emission which occurs in the high temperature region in both types of absorber layers at about 1.15eV but vanishes for sputtered Cu-rich absorbers at about T<140K. Third, we correlate the properties and quality of photovoltaic devices with the investigation of the deep level in CuInS2 thin films.