Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.103: Poster
Thursday, March 30, 2006, 16:30–19:00, P3
SILAR conditioning of TiO_2 / In(OH)_xS_y / PbS(O) structures — •Ilona Oja1, Sergej Gavrilov2, Bianca Lim3, Abdelhak Belaidi3, Larissa Dloczik3, Martha Ch. Lux-Steiner3, and Thomas Dittrich3 — 1Tallinn University of Technology, Department of Materials Science, Ehitajate tee 5, Tallinn 19086, Estonia — 2Moscow Institute of Electron Technology, 124498 Moscow, Russia — 3Hahn-Meitner-Institute, Glienicker Str. 100, D-14109 Berlin, Germany
In(OH)_xS_y and PbS(O) films and ultra-thin inter-layers were deposited by SILAR (successive ion layer adsorption reaction, this is a wet chemical deposition technique in aqueous solution) and TiO_2 / In(OH)_xS_y / PbS(O) / PEDOT:PSS solar cell structures were prepared to investigate photoelectrical properties of the layers. Investigations were carried out by spectral surface photovoltage in the Kelvin-probe and capacitor arrangements, current-voltage and quantum efficiency analysis. The band gap of In(OH)_xS_y was tuned between 2.6 and 1.9 eV by changing the annealing temperature of In(OH)_xS_y in air between 50 and 350∘C. The open circuit voltage of the solar cell structures correlated well with the band gap and the work function of the In(OH)_xS_y. Surprisingly, excess charge carriers generated in the PbS(O) layer do not contribute significantly to the short circuit current. The interface between the In(OH)_xS_y and the PbS(O) layers has been modified by introducing ultra-thin layers which are important for high open circuit potentials.