Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 50: Poster II

HL 50.108: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Realization of logic circuits with in-plane gate transistors written using focused-ion-beam implantation — •M. Draghici, D. Reuter, and A. D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum

In-plane gate (IPG) transistors realized by writing insulating lines with focused ion beam (FIB) implantation technique [1] are promising devices for logic devices due to the fact that this technique requires no alignment between gate, source and drain. Considering this aspect, the fabrication of IPG transistors is a very reliable single step process. The drawback of this method consists in impossibility to realize complementary device structures on the same sample because only one carrier type is available depending on the heterostructure doping. In order to overcome this problem, we use FIB implantation doping to fabricate n- and p-type channel IPG transistors by implantation of Si and Be, respectively [2].

We present here the realization of logic devices based on IPG transistors realized by insulating lines (negative writing) or overcompensation doping by FIB implantation (positive writing). Different geometries and implantation doses will be studied and analyzed especially for the circuits realized by positive writing.

We gratefully acknowledge financial support from the DFG GRK384.

[1] A. D. Wieck and K. Ploog, Appl. Phys. Lett. 56, 928 (1990).

[2] D. Reuter, A. Seekamp, A. D. Wieck, Physica E 21, 872 (2004).