Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.14: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Optical properties of GaMnN grown by MBE — •J. Zenneck, M. Kocan, M. Röver, D. Mai, J. Malindretos, R. G. Ulbrich, and A. Rizzi — IV. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen

We successfully grew GaMnN on Si(111) with a plasma-assisted molecular beam epitaxy system. To incorporate the manganese it was necessary to lower the growth temperature from 760^∘C (optimized GaN growth) to 650^∘C and change the growth regime to nitrogen-rich. These conditions lead to mediocre crystal quality compared with pure GaN as measured by photoluminescence (PL), Raman and x-ray diffraction (XRD).

The XRD measurements reveal homogeneous material or a secondary phase (GaMn₃N), depending on the growth conditions. PL shows no excitonic luminescence at all, but a structured DAP-band the intensity of which decreases with increasing Mn-content. The yellow luminescence is only visible in lightly Mn-doped samples without a secondary phase. In Raman measurements so called disorder-activated modes are visible instead of a clear A1 mode in samples with higher Mn-content. We will discuss these findings with respect to the possible defects involved. Furthermore the effect of post growth annealing on the optical properties of GaMnN will be analysed.