Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.15: Poster
Thursday, March 30, 2006, 16:30–19:00, P3
Reaktive Ion Etching of c-GaN — •Marina Panfilova1, Jörg Schörmann1, Stefan Potthast1, Donat Josef As1, Ulrich Hilleringmann2, and Klaus Lischka1 — 1Universität Paderborn, Fakultät für Naturwissenschaften, Department Physik, Warburger Str. 100, 33095 Paderborn — 2Universität Paderborn, Institut für Elektrotechnik und Informationstechnik, Sensorik, Warburger Str. 100, 33095 Paderborn
Cubic III - nitride semiconductors have great potential for optoelectronic and electronic devices due to their wide direct band gaps and absence of piezoelectric polarization. Because GaN is chemically very stable, dry etching techniques must be established in order to fabricate devices. Reactive ion etching (RIE) of cubic gallium nitride (c-GaN) epitaxially grown on 3C-SiC substrate has been investigated using various chemistries based on SiCl4, Ar and SF6 plasmas. The influence of gas flow, pressure and RF - power on etch rate and surface morphology were studied. For RF - power in the range of 0.8 kW to 1.4 kW, the etch rate is found to increase with RF - power, attaining a maximum rate of 27 nm/min at 1.4 kW. The addition of an inert gas Ar is found to barely affect the etch rate. Surface morphology before and after etching is checked by atomic force microscopy. This show that the roughness of the etched surface is comparable to that of the unetched surface. The measurements by scanning electron microscopy show a slight overcut. The structural resolution of our method is in the order of 1 µm.