Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 50: Poster II
HL 50.17: Poster
Thursday, March 30, 2006, 16:30–19:00, P3
Growth of cubic AlxInyN and cubic AlxGayIn1−x−yN lattice-matched to GaN — •Mark Schnietz1, Jörg Schörmann1, Shunfeng Li1, Jürgen Vogt2, Jürgen W. Gerlach3, Donat J. As1, and Klaus Lischka1 — 1University of Paderborn, Department of Physics, D-33098 Paderborn, Germany — 2Universität Leipzig, Institut für Experimentelle Physik II, Linnéstr. 5, D-04103 Leipzig,Germany — 3Leibniz-Institut für Oberflächenmodifizierung Leipzig, Permoserstraße 15, D-04318 Leipzig, Germany
We report the first epitaxial growth of c-AlxInyN/GaN and c-AlxGayIn1−x−yN/GaN heterostructures lattice-matched to c-GaN on freestanding 3C-SiC substrates by plasma-asissted molecular beam epitaxy. Cubic AlxInyN alloys can be used for the realization of lattice-matched c-AlInN/GaN Bragg mirrors due to its high difference in refractive index to GaN. The c-AlxGayIn1−x−yN alloy permits the independent control of the band gap and the lattice parameter. The ternary and quaternary films were grown at substrate temperatures of 620∘C. Different alloy compositions were obtained by varying the flux of Al and Ga. The alloy composition was measured by Energy Dispersive X-ray Spectroscopy (EDS) and Rutherford Backscattering (RBS). X-ray reciprocal space map of asymmetric (-1-13) reflex were used to measure the lattice parameters and to verify the lattice match between the alloy and the c-GaN buffer layers.