Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 50: Poster II

HL 50.23: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Temperature- and electric field-dependence of photoluminescence spectra of InGaN/GaN-heterostructures — •Clemens Vierheilig¹, Harald Braun¹, Nikolaus Gmeinwieser¹, Ulrich T. Schwarz¹, Werner Wegscheider¹, Elmar Baur², Uwe Strauß², and Volker Härle² — ¹Naturwissenschaftliche Fakultät II - Physik, Universität Regensburg Universitätsstr. 31, 93053 Regensburg, Germany — ²OSRAM Opto Semiconductors GmbH, Wernerwerkstr. 2, 93049 Regensburg, Germany

For further enhance the efficiency of InGaN-based LEDs, it is necessary to get a good knowledge of the processes in the active layer, in particular the impact of InGaN/GaN quantum wells and barrier structure, piezoelectric fields, and indium-fluctuation induced carrier localizations. We study the influence of these effects on carrier capture and internal efficiency. We measure field-dependent electroluminescence (EL) and photoluminescence (PL) spectra in a temperature-range between 4K and room temperature with our confocal micro-Photoluminescence setup to access a wide range of excitation densities. The radiative and nonradiative carrier-recombination rates extracted from these steady-state experiments are then compared to time-resolved measurements from a macro-PL measuring station. The results allow to draw conclusions on the mechanisms of radiative and nonradiative carrier-recombination.