Dresden 2006 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Halbleiterphysik

HL 50: Poster II

HL 50.26: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Electron Blocking Layers in GaN-based Laser Diodes — •Christian Meissner, Stephan Figge, Jens Dennemarck, Timo Aschenbrenner, and Detlef Hommel — Institute of Solid States Physics, University of Bremen, Otto-Hahn-Allee, D-28359 Bremen, Germany

Several InGaN multi quantum well laser diodes with different p-waveguide designs were grown in a vertical MOVPE reactor. Optical and electrical properties of these structures with AlGaN electron blocking layers will be presented.
AlGaN electron blocking layers are used in laser diodes to prevent the electron overflow to the p-doped layers. In particular the placement in the waveguide, the width and height of the electron blocking layer has an influence on the characteristics of the devices. Furthermore the electromigration of the p-dopant magnesium harms the operation of the laser diodes. Therefore, we additionally varied the onset of Mg-doping in the waveguide.
The structures were investigated by photoluminescence and electroluminescence. Both spectra indicate an operating wavelengh around 390nm. Measurements of light output power and the current-voltage characteristic show the dependence of the optical properties on the structure design.