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HL: Halbleiterphysik

HL 50: Poster II

HL 50.27: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Enhansed Low Stressed SiO2 Phase Creation in Nitrogen Doped Cz-Si — •Sergii Zlobin — Lashkarev Institute of Semiconductor Physics of the NASU, 41, Prospekt Nauki, 03028, Kyiv, Ukraine

This presentation deals with comparative study of oxygen structural arrangement in the Cz-Si wafers of different diameter, including those doped with nitrogen. To create oxygen precipitates two-step annealing (at 750 and 1050 oC) in argon ambient was used. Absorption band connected with stretching Si-O vibrations was measured using differential spectrometer and FTIR spectrometer. Absorbance spectra were deconvoluted into Gaussian profiles, which were analyzed in the frameworks of the Random Bonding Model to estimate contribution of different kinds of SiO4 tetrahedra rings in precipitated oxide phase lattice. It was shown that presence of soluted nitrogen promotes rapid release of the interstitial oxygen and favored creation of SiO2 phase with increased content of the less-stressed 6-fold SiO4 tetrahedra rings. This effect may be principal in providing enhanced radiation hardness and mechanical stability of the Silicon of large diameter.