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HL: Halbleiterphysik

HL 50: Poster II

HL 50.30: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Indium in silicon under tensile strain — •N. Santen and R. Vianden — Helmholtz-Institut für Strahlen- und Kernphysik der Universität Bonn, Nußallee 14-16, D-53115 Bonn

In the past, donor-acceptor pairs in silicon have been studied intensively using the perturbed angular correlation method (PAC) with the acceptor ¹¹¹In as probe [1]. In addition it was found that the remaining unpaired indium on regular lattice sites showed a reaction on uniaxial mechanical strain, which seemed to depend on the dopant species. In order to study this phenomenon more detailed we carried out further experiments which reveal that the tension induced EFG depends on the concentration of the co-implanted donors. The results will be presented and discussed.

[1] G. Tessema, Indium-impurity pairs in semiconductors and the study of the influence of uniaxial stress on defect complexes in silicon, Dissertation Universität Bonn, 2003