Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.31: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Spatially resolved characterization of bevelled InP/InGaAs/InGaAsP structures studied by Raman spectroscopy — •Janet Leschner1, Gert Irmer1, Peter Krcho2, Rudolf Srnanek2, Stanislav Hasenoehrl3, and Jozef Novak3 — 1TU Bergakademie Freiberg, Institut für Theoretische Physik, D-09596 Freiberg, Germany — 2Microelectronic Department, Slovak University of Technology, 81219 Bratislava, Slovakia — 3Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia
InP/InGaAs/InGaAsP heterojunctions have a wide application in optoelectronic devices. Structures used for photodiodes were grown by MOCVD. The bevel through this structure was prepared by chemical etching with bevel angle of about 0.00001 rad. The material composition and the strain near the interfaces due to lattice misfit are analyzed spatially resolved by micro Raman scattering of the LO-phonons. The quality of the interfaces is further characterized by measurement of the LO-phonon-plasmon coupling of photoinduced carriers.