Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.33: Poster
Thursday, March 30, 2006, 16:30–19:00, P3
Photoinduced carriers in bevelled InP structures studied by micro-Raman spectroscopy — •Geoffrey Richardson1, Gert Irmer1, Rudolf Srnanek2, Stanislav Hasenoehrl3, and Jozef Novak3 — 1TU Bergakademie Freiberg, Institut für Theoretische Physik, D-09596 Freiberg, Germany — 2Microelectronic Department, Slovak University of Technology, 81219 Bratislava, Slovakia — 3Institute of Electrical Engineering, Slovak Academy of Sciences, 84104 Bratislava, Slovakia
InP and its related alloy epilayers are of great technological interest in numerous applications such as high-speed circuits, integrated optoelectronics and high-power devices. The knowledge about near-surface properties, as well as their precise control, is becoming increasingly important, especially as the dimensions of device components continue to shrink. Raman experiments were performed on bevels of layered structures with special emphasis on the study of the generation and dynamics of photoexcited carriers. Spatially resolved measurements provide information about the local distribution of free carriers and depletion layers near the interfaces. Between the TO and LO phonon of InP a band was detected which is attributed to a highly damped mode of photoinduced holes.