Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.47: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
C-U INVESTIGATION OF BILAYER, IONIZED CLUSTER BEAM DEPOSITED, Al/PTCDA/CuPc/ITO ORGANIC SEMICONDUCTOR STRUCTURE — •Bruno Cvikl1,2, Matjaž Koželj2, and Dean Korošak1 — 1Chair of Applied Physics, Faculty of Civil Engineering, University of Maribor, Maribor, Slovenia — 2Institute J. Stefan, Ljubljana, Slovenia
In this work the results of the room temperature C-U and I-U measurements of the ionized cluster beam deposited Al/PTCDA(0.8µm)/CuPc(1.2µm)/ITO organic bilayer structure, of two hole transporting materials, will be presented. Its room temperature C-U line shape, for larger reverse and forward values of bias, broadly resembles the Berleb et al. [1] of the thick Alq3 layer data. The C-U line shapes of the said structure, as a function of Alq3 thickness, are well described in terms of the newly derived expression for the differential capacitance [2]. It incorporates the bias dependent, at the cathode/organic semiconductor junction, induced net charge density and the bias independent electric dipole density existing within the organic mixture in the neighborhood of the Alq3/NPB region. However, within the interval between -1 V to + 2.5 V the C-U line shape of our sample is akin the cubic parabola that our expression for the differential capacitance fails to predict. The possible mechanisms that modulate the capacitance-voltage line shape of such an organic structure will be presented and discussed in details.
[1] S. Berleb, W. Brütting, G. Paasch, Synth. Metals, 122 37 (2001). [2] B. Cvikl, M. Koželj, D. Korošak, R. Jecl, submitted for publication, (2005).