Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.49: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Investigations of electron transport in a contact limited methanofullerene thin film transistor — •Elizabeth von Hauff¹, Jürgen Parisis¹, and Vladimir Dyakonov² — ¹Institute of Physics, Energy and Semiconductor Research Laboratory, Carl von Ossietzky University of Oldenburg, 26111 Oldenburg, Germany — ²Experimental Physics VI, Faculty of Physics and Astronomy, University of Würzburg, 97074 Würzburg, Germany

In this study the electron transport in a methanofullerene was investigated via the thin film transistor structure. The temperature dependent source-drain current and the electron field effect mobilities in [6,6]-phenyl C₆₁-butyric acid methyl ester (PCBM) were investigated in context of a model for field effect theory in amorphous materials from the literature. An initial fit led to discrepancies between experimental and predicted data at low temperatures and gate voltages, an effect which was attributed to parasitic contact resistances between the source/drain contacts and the semiconductor. The effects of the contact resistances were then investigated. Studying the temperature and electric field activated behaviour of the contact resistance was found to aid in the understanding of charge injection in the device. A form for the contact resistance based on a diffusion limited thermionic emission current was proposed. Incorporating the proposed form of the contact resistances into the model was found to lead to much better agreement between experimental data and that predicted by the model.