Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.4: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Mn-silicide nanoparticles formed inside Si using ion implantation — •Shengqiang Zhou, K. Potzger, A. Mücklich, F. Eichhorn, N. Schell, R. Grötzschel, B. Schmidt, W. Skorupa, M. Helm, and J. Fassbender — Institute for Ion Beam Physics and Materials Research at the Forschungszentrum Rossendorf, POB 510119, 01328 Dresden, Germany

300 keV Mn was implanted into p-Si with a fluence of 1*10^15/cm2, 1*10^16/cm2 and 5*10^16/cm2, respectively, at 620 K. The samples were annealed at 1070 K in N2 ambient for 5 min by rapid thermal annealing. Rutherford backscattering/channeling, transmission electron microscopy and X-ray diffraction were applied for structural characterization. Mn-silicide nanoparticles were formed with the size of 5 nm already in the as-implanted samples and grew up to around 30 nm after annealing. Moreover no significant evidence is found for Mn substituting Si sites either in as-implanted or annealed samples. The virgin samples already show a ferromagnetic like behavior, and the moment is slightly increased after implantation (1*10^16/cm2) and annealing by around 0.5 Bohr magneton per Mn. Therefore, the majority of Mn ions formed Mn-silicides, and some are diluted in Si matrix and develop into ferromagnetic coupling. These effects have to be properly considered for the design of Si-based diluted magnetic semiconductors.

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