Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.55: Poster
Thursday, March 30, 2006, 16:30–19:00, P3
Conventional pillar-type and novel pyramidal III-V microcavities: Fabrication and characterization — •M. Karl1, W. Löffler1, J. Lupaca-Schomber1, T. Passow1, S. Li1, F. Perez-Willard2, J. Hawecker2, D. Gerthsen2, H. Kalt1, C. Klings-hirn1, and M. Hetterich1 — 1Institut für Angewandte Physik and Center for Functional Nanostructures (CFN), Universität Karlsruhe, D-76131 Karlsruhe, Germany — 2Laboratorium für Elektronenmikroskopie and CFN, Universität Karlsruhe, D-76128 Karlsruhe, Germany
In our contribution we discuss two different approaches to realize GaAs-based micro-cavities: In the first approach conventional pillar-type resonators with AlAs/GaAs distributed Bragg reflectors (DBRs) were fabricated from MBE-grown layer structures using focussed ion beam (FIB) milling. In(Ga)As quantum dots emitting at around 950 nm served as a broad-band light source in these cavities. To assess the optical properties of individual micro-resonators a confocal micro-photoluminescence set-up with a tunable Ti:sapphire laser for excitation was used. In particular, we investigated the dependence of the observed cavity modes on the pillar diameter.
In extension to this work we have also recently started to study the potential of a new cavity design. The latter consists of a pyramidal GaAs resonator placed on top of an AlAs/GaAs DBR. It can be fabricated by combining electron-beam lithography and wet chemical etching of structures containing an AlAs sacrificial layer. First results obtained for these resonators will be presented. In particular, it will be shown that even coupled cavities can easily be realized in this approach.