Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.6: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Acceptor passivation in silicon wafers under ambient conditions — •T.D. Vo, M. Thieme, J. Bollmann, and J. Weber — Technische Universität Dresden, 01062 Dresden, Germany

Standard p-type silicon wafers exhibit reduced conductivity at surface-near regions after storage for months under ambient conditions. The extension of this passivated layer depends on the shallow doping density. The conductivity can be reactivated by thermal treatments at moderate temperatures. Schottky barrier diodes were prepared without wet chemical treatments to avoid any additional hydrogen contamination. All samples (0.05 to 20 Ω cm, Cz- and FZ-grown) show ion drift effects during reverse bias annealing. From temperature and time dependent capacitance measurement we identify the dissociation energy of the boron complex to be 1.3 eV. Annealed samples without passivation show transient ion drift effects very similar to the initial samples. Apparently, the annealing does not cause an out diffusion of the ions. Wet chemical etching on annealed samples was performed to study the potential role of hydrogen. We discuss a possible identification of the compensating species.