Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.72: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Self-Assembly of Nitride Nanowires grown by MBE — •Ratan Debnath¹, Ralph Meijers¹, Thomas Richter¹, Toma Stoica^1,2, Raffaella Calarco¹, Michel Marso¹, and Hans Lüth¹ — ¹Institute of Thin Films and Interfaces (ISG1) and CNI - Centre of Nanoelectronic Systems for Information Technology, Research Center Jülich,52425 Jülich, Germany — ²INCDFM, Magurele, POB Mg7, Bucharest,Romania

Among different types of nanostructures, semiconductor nanowires and nanotubes are extremely interesting as building blocks for nanoelectronics, due to their suitability for fabricating both nanoscale devices and interconnects. Although there have been a lot of investigations on these semiconductor nanowires, fundamental physical properties are still unclear. The growth mechanism and especially the nucleation of the wires, which is very important for producing ordered arrays of nanowires is not understood in detail. The self-assembled growth of GaN, InN as well as In_xGa_1−xN nanowires on Si(111) substrates by molecular beam epitaxy (MBE) was investigated by means of several characterization methods. Scanning electron microscopy (SEM) images showed the influence of growth parameters on column shape and density whereas, optical methods (photo- (PL) and cathodoluminescence (CL)) provided the information about the quality of the grown wires. It was even possible to get spatially-resolved information by combining SEM and CL. By introducing doping materials (Si and Mg) in the nanowires, column morphology can be changed considerably, depending on the concentration of the dopants.