Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.73: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Structural and electronic properties of morphological transformed InAs quantum dots — •Andreas Schramm, Jan Schaefer, Fabian Wilde, Tobias Kipp, Stephan Schulz, Christian Heyn, and Wolfgang Hansen — Institut für Angewandte Physik, Jungiusstraße 11C, 20355 Hamburg

We study the structural and electronic properties of morphological transformed InAs-quantum dots embedded in Schottky diodes using atomic force microscopy (AFM), photoluminescence (PL), capacitance (CV) and deep level transient spectroscopy (DLTS). The samples were grown on (001) GaAs in a solid-source MBE system. We find that we can control the shape of the dots by an annealing step after growth of an AlAs cap layer. Both AFM data as well as the electronic properties show that the dots size increases with the AlAs cap layer thickness. Furthermore, we observe a strong lateral shape anisotropy in quantum dots grown beneath AlAs cap layers. The influence on the electronic properties like threshold voltages and energies as well as number of observed DLTS-maxima will be briefly discussed.