Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.7: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Isolated gold impurities in surface near regions of silicon — •J. Bollmann and J. Weber — Technische Universität Dresden, 01062 Dresden, Germany

A DLTS and PL study on silicon samples doped with gold is reported. After the implantation of Au ions (particle fluence from 10¹² to 10¹⁵ cm⁻², energy 80 keV), a thermal treatment at 950 ^∘C (20 min) was carried out to remove the radiation damage and to diffuse in the gold atoms. The implantation makes use of ion beams of single isotope mass and a precise amount of incorporated impurities. EXAFS studies showed that under implantation conditions most of the Au atoms occupy isolated substitutional lattice sites [J. Bollmann, D. C. Meyer , J. Weber, and H.-E. Mahnke, ICDS 23]. In the samples the already known PL line at 793 meV, attributed to the neutral substitutional gold center, is identified. In contrast, the deep level centre E12 detected by DLTS does not agree with the reported energy level for the substitutional Au. The E12 defect is concentrated close to the surface.