Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.8: Poster

Thursday, March 30, 2006, 16:30–19:00, P3

Volumetric effects under pressurization and microindentation in semiconductors — •Vsevolod Shchennikov Jr¹, Sergey Ovsyannikov^2,3, Vladimir Shchennikov², Ivan Komarovsky², and Sergey Smirnov¹ — ¹Micromechanics lab., Institute of Engineering Sciences of Russian Academy of Sciences, Urals Division, GSP-207, 34 S. Komsomolskaya Str, Yekaterinburg 620219, RUSSIA — ²High-Pressure Group, Institute of Metal Physics, Urals Division of Russian Academy of Sciences, GSP-170, 18 S. Kovalevskaya Str., Yekaterinburg 620041, RUSSIA — ³The Institute for Solid State Physics, The University of Tokyo, Kashiwanoha, 5-1-5, Kashiwa, Chiba 277-8581, JAPAN

The results of parallel measurements of volumetric effects both under pressurization (in a region of structural transformations from 0 up to 0-20 GPa) and micro-indentation treatments in semiconductor substances are reported. For comparative characterization the single crystals of Czochralski-grown Si wafers, (i) subjected to various thermal and pressure treatments, (ii) doped with N, and (iii) irradiated with high energy particles (protons), as well as of ZnSe, and n- and p-GaAs. For the pressurization the automated was used allowing to register simultaneously several parameters of both a sample and environment. A bending has been found of the dependences of both the diamond indentor penetration depth, and contraction of sample sizes in pressure experiments, related to a drop of lattice volume at phase transitions. The model of multi-phase system has been used for analysis of the results. The work was supported by the RFBR (Gr. Ns. 04-02-16178, 04-01-00882).