Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.93: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Lateral and vertical electric field applied to Self-Assembled QDs — •V. Stavarache1, D. Reuter1, A. D. Wieck1, R. Oulton2, and M. Bayer2 — 1Lehrsthul für Angewandte Festkörperphysik, Ruhr Universität Bochum, Universitätstrasse 150, D-44780, Bochum — 2Experimentele Physik II, Otto-Hann Strasse 4, D-44221 Dortmund
The effect of an in-plane (lateral) and a vertical electric field on self-assembled InAs -quantum dots (QDs) by photoluminescence (PL) and time-resolved spectroscopy will be presented. For this purpose, we have fabricated a double p-i-n device with application of an electric field in the lateral and vertical directions. Combining techniques such as, electron beam lithography (EBL), focus ion beam implantation (FIB), and standard optical lithography we are able to define small p-i-n structures, which allow us the realization of fields higher than ∼ 105 Vm−1. By applying an external electric field, a redshift of the wavelength emission is expected due to the Stark effect, as well as an increase in the radiative lifetime of the exciton accompanied by a decrease in the PL intensity.