Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 50: Poster II

HL 50.97: Poster

Donnerstag, 30. März 2006, 16:30–19:00, P3

Lateral Features of Cu(InGa)Se₂-Heterodiodes by Submicron Resolved Simultaneous Luminescence and Light Beam Induced Currents — •Levent Gütay, Tim Jürgens, and Gottfried Heinrich Bauer — Institute of Physics, Carl von Ossietzky University Oldenburg, F.R.G.

Polycrystalline Cu(InGa)Se₂-absorbers and hetero-diodes show lateral variations in optoelectronic magnitudes like luminescence yield (pl) and short circuit current density (j_sc) in the few micrometer range (3-8 µm) whereas structural features such as grain sizes lie in the 1µm-scale or even below. From the dependence of pl-yield and j_sc on temperature of regimes with high and with low signals we estimate activation energies for non-radiative optical transitions and for minority transport and relate these numbers to potential fluctuations for which we got evidence from the dependence of spectrally resolved pl versus exitation level. Variations of the lateral extension of j_sc-patterns will be discussed in terms of the influence of a circuitry model of non illuminated diodes in the neighborhood of an illuminated junction.