Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 50: Poster II
HL 50.98: Poster
Donnerstag, 30. März 2006, 16:30–19:00, P3
Computer modelling of gettering under conditions of rapid thermal processing — •Carsten Rudolf1, Michael Seibt1, and Vitaly Kveder2 — 1IV. Physikalisches Institut der Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Goettingen — 2Institute of Solid State Physics RAS, Chernogolovka, 142432 Moscow reg., Russia
We modelled phosphorous-diffusion-gettering of iron in monocrystalline p-Si under the conditions of a 2-step rapid thermal processing by using our gettering simulator software tool. The applied thermal treatment consists of a preceding step at 1100∘C and a subsequent step at 800∘C. The step at higher temperature enables dissolution of precipitates whereas the actual gettering takes place during the step at lower temperature.
Results of two sets of simulations are presented: 1) time at 800∘C is varied while the time at 1100∘C is kept constant. 2) times at both temperatures are varied in such a way that a constant sheet resistance is yielded.
Gettering after dissolution step of appropriate duration reduces the total amount of metal in the bulk of the wafer significantly compared to gettering without prior dissolution step. For RTP at constant sheet resistance gettering is limited by incomplete dissolution of precipitates for too short times at 1100∘C and by incomplete outdiffusion of the mobile Fe species for too short times at 800∘C.