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16:30 |
HL 50.1 |
Pressure-Induced Insulator-Metal Transition in (CoC10H10)0.25TiSe2 — •Sergey Ovsyannikov, Vladimir Shchennikov, Alexander Titov, and Yoshiya Uwatoko
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16:30 |
HL 50.2 |
ATOMISTIC STUDY OF BULK PROPERTIES AND POINT DEFECTS IN GERMANIUM — •Henning Gessner and Matthias Posselt
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16:30 |
HL 50.3 |
Anisotropic Zeeman splitting of shallow impurities in Si/Ge double-barrier heterostructures — •Oleksiy B. Agafonov, Kai-Martin Haendel, Ulrich Denker, Oliver G. Schmidt, and Rolf J. Haug
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16:30 |
HL 50.4 |
Mn-silicide nanoparticles formed inside Si using ion implantation — •Shengqiang Zhou, K. Potzger, A. Mücklich, F. Eichhorn, N. Schell, R. Grötzschel, B. Schmidt, W. Skorupa, M. Helm, and J. Fassbender
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16:30 |
HL 50.5 |
Investigation of copper transport in silicon — •Mike Thieme and Jörg Weber
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16:30 |
HL 50.6 |
Acceptor passivation in silicon wafers under ambient conditions — •T.D. Vo, M. Thieme, J. Bollmann, and J. Weber
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16:30 |
HL 50.7 |
Isolated gold impurities in surface near regions of silicon — •J. Bollmann and J. Weber
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16:30 |
HL 50.8 |
Volumetric effects under pressurization and microindentation in semiconductors — •Vsevolod Shchennikov Jr, Sergey Ovsyannikov, Vladimir Shchennikov, Ivan Komarovsky, and Sergey Smirnov
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16:30 |
HL 50.9 |
Type-I alignment and direct fundamental gap in SiGe based heterostructures — •Michele Virgilio and Giuseppe Grosso
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16:30 |
HL 50.10 |
Raman spectroscopy of hydrogen molecules in germanium — •Martin Hiller, Edward Lavrov, and Jörg Weber
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16:30 |
HL 50.11 |
Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy — •S. Heun, F. Ratto, F. Rosei, A. Locatelli, S. Cherifi, S. Fontana, P.-D. Szkutnik, A. Sgarlata, M. De Crescenzi, and N. Motta
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16:30 |
HL 50.12 |
Anisotropy of the Γ-point electron effective mass in hexagonal InN — •T. Chavdarov, T. Hofmann, V. Darakchieva, H. Lu, W.J. Schaff, and M. Schubert
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16:30 |
HL 50.13 |
Transition energies and Stokes shift analysis for In-rich InGaN and InAlN alloys — •P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, and W.J. Schaff
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16:30 |
HL 50.14 |
Optical properties of GaMnN grown by MBE — •J. Zenneck, M. Kocan, M. Röver, D. Mai, J. Malindretos, R. G. Ulbrich, and A. Rizzi
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16:30 |
HL 50.15 |
Reaktive Ion Etching of c-GaN — •Marina Panfilova, Jörg Schörmann, Stefan Potthast, Donat Josef As, Ulrich Hilleringmann, and Klaus Lischka
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16:30 |
HL 50.16 |
Molecular Beam Epitaxy of cubic AlxGa1−xN and AlN — •Elena Tschumak, Stefan Potthast, Jörg Schörmann, Donat Josef As, and Klaus Lischka
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16:30 |
HL 50.17 |
Growth of cubic AlxInyN and cubic AlxGayIn1−x−yN lattice-matched to GaN — •Mark Schnietz, Jörg Schörmann, Shunfeng Li, Jürgen Vogt, Jürgen W. Gerlach, Donat J. As, and Klaus Lischka
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16:30 |
HL 50.18 |
Optical properties of InN films — •Christoph Cobet, Patrick Vogt, Munise Rakel, Rüdiger Goldhahn, Massimo Drago, Antje Vollmer, Wolfgang Richter, and Norbert Esser
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16:30 |
HL 50.19 |
Polarization properties of InGaN quantum wells grown on semipolar GaN {1-101} facets — •Martin Feneberg, Frank Lipski, Barbara Neubert, Peter Brückner, Ferdinand Scholz, Klaus Thonke, and Rolf Sauer
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16:30 |
HL 50.20 |
Optical and electrical properties of nitride-based UV LEDs — •D. Fuhrmann, T. Retzlaff, T. Litte, H. Bremers, U. Rossow, D. Dräger, and A. Hangleiter
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16:30 |
HL 50.21 |
Electro- and photoluminescence investigations of nitride-based blue and green LEDs — •T. Litte, D. Fuhrmann, C. Netzel, H. Bremers, U. Rossow, and A. Hangleiter
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16:30 |
HL 50.22 |
UHV-cathodoluminescence investigation of metastable light emission in GaN/GaInN quantum well structures — •Martina Finke, Daniel Fuhrmann, Carsten Netzel, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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16:30 |
HL 50.23 |
Temperature- and electric field-dependence of photoluminescence spectra of InGaN/GaN-heterostructures — •Clemens Vierheilig, Harald Braun, Nikolaus Gmeinwieser, Ulrich T. Schwarz, Werner Wegscheider, Elmar Baur, Uwe Strauß, and Volker Härle
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16:30 |
HL 50.24 |
Waveguide mode dynamics of InGaN laser diodes — •Christoph Lauterbach, Ulrich Schwarz, Alfred Lell, and Volker Härle
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16:30 |
HL 50.25 |
AlGaN templates on sapphire — •Kai Otte, Tomohiro Yamaguchi, Stephan Figge, and Detlef Hommel
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16:30 |
HL 50.26 |
Electron Blocking Layers in GaN-based Laser Diodes — •Christian Meissner, Stephan Figge, Jens Dennemarck, Timo Aschenbrenner, and Detlef Hommel
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16:30 |
HL 50.27 |
Enhansed Low Stressed SiO2 Phase Creation in Nitrogen Doped Cz-Si — •Sergii Zlobin
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16:30 |
HL 50.28 |
Investigation of SnSe, SnSe2 and Sn2Se3 alloys for electronic memory applications — •Kyungmin Chung, Daniel Wamwangi, Christoph Steimer, and Matthias Wuttig
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16:30 |
HL 50.29 |
The origin of high vacancy concentrations in chalcogenide alloys — •Daniel Lüsebrink, Wojciech Welnic, Christoph Steimer, and Matthias Wuttig
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16:30 |
HL 50.30 |
Indium in silicon under tensile strain — •N. Santen and R. Vianden
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16:30 |
HL 50.31 |
Spatially resolved characterization of bevelled InP/InGaAs/InGaAsP structures studied by Raman spectroscopy — •Janet Leschner, Gert Irmer, Peter Krcho, Rudolf Srnanek, Stanislav Hasenoehrl, and Jozef Novak
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16:30 |
HL 50.32 |
Optically detected resonances in n-doped quantum wells and quantum dots — •Michael Gerbracht, A. A. Dremin, D. R. Yakovlev, and M. Bayer
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16:30 |
HL 50.33 |
Photoinduced carriers in bevelled InP structures studied by micro-Raman spectroscopy — •Geoffrey Richardson, Gert Irmer, Rudolf Srnanek, Stanislav Hasenoehrl, and Jozef Novak
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16:30 |
HL 50.34 |
Photoluminescence studies of GaAs quantum wells in close proximity to a GaMnAs barrier layer — •Robert Schulz, Tobias Korn, Andreas Maurer, Dieter Schuh, Werner Wegscheider, and Christian Schüller
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16:30 |
HL 50.35 |
Diamond zinc oxide heterojunction — •Peter Geithner, Jürgen Ristein, and Lothar Ley
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16:30 |
HL 50.36 |
Strongly correlated excitons in quantum wells — •Patrick Ludwig, Alexei Filinov, Michael Bonitz, and Heinrich Stolz
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16:30 |
HL 50.37 |
Fine structure of the intersubband absorption in stepped quantum wells — •Pilar Aceituno, Antonio Hernández-Cabrera, and Fedir T. Vasko
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16:30 |
HL 50.38 |
Ellipsometry on pentacene thin films OFETs. — •Daniel Faltermeier, Bruno Gompf, Matthias Fischer, Ashutosh Tripathi, Jens Pflaum, and Martin Dressel
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16:30 |
HL 50.39 |
A process for screening of organic semiconductor properties based on sub micron thin film transistors — •Christian Rickert, Michael Leufgen, Georg Schmidt, and Laurens Molenkamp
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16:30 |
HL 50.40 |
Investigation of electric field- and illumination intensity dependent recombination losses in polymer-fullerene bulk heterojunction solar cells — •Jörg Bösner, Vladimir Dyakonov, and Ingo Riedel
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16:30 |
HL 50.41 |
Silicon Thin Films Sensitized by Phthalocyanine Dyes — •Christian Kelting, Ulrich Weiler, Thomas Mayer, Wolfram Jaegermann, Dieter Wöhrle, Marinus Kunst, and Derck Schlettwein
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16:30 |
HL 50.42 |
Temperature Dependent Bias-Stress Effects on in-situ OFET Characteristics — •B. Gburek, M. Michelfeit, M. Leufgen, G. Schmidt, J. Geurts, and L.W. Molenkamp
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16:30 |
HL 50.43 |
Scaling behaviour of sub-µm OFETs with different active-layer materials — •O. Rost, M. Leufgen, G. Schmidt, J. Geurts, and L. W. Molenkamp
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16:30 |
HL 50.44 |
Change of the work function of a polymer substrate by electrochemical treatments: Influence on the energy level alignment — •Heiko Peisert, Andreas Petr, Lothar Dunsch, Thomas Chassé, and Martin Knupfer
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16:30 |
HL 50.45 |
Solution processed single crystal organic field-effect transistors based on tetrathiafulvalene derivates — •M. Leufgen, O. Rost, G. Schmidt, N. S. Oxtoby, M. Mas-Torrent, N. Crivillers, J. Veciana, C. Rovira, J. Geurts, and L. W. Molenkamp
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16:30 |
HL 50.46 |
Topographical and electrical characterization of pentacene thin-film transistors using thiol-modified electrodes — •D.V. Pham, C. Bock, U. Kunze, D. Käfer, G. Witte, and Ch. Wöll
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16:30 |
HL 50.47 |
C-U INVESTIGATION OF BILAYER, IONIZED CLUSTER BEAM DEPOSITED, Al/PTCDA/CuPc/ITO ORGANIC SEMICONDUCTOR STRUCTURE — •Bruno Cvikl, Matjaž Koželj, and Dean Korošak
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16:30 |
HL 50.48 |
Spin injection at metal/organic semiconductor interface — •Dean Korošak, Bruno Cvikl, and Matjaž Koželj
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16:30 |
HL 50.49 |
Investigations of electron transport in a contact limited methanofullerene thin film transistor — •Elizabeth von Hauff, Jürgen Parisis, and Vladimir Dyakonov
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16:30 |
HL 50.50 |
Optical investigation of P3HT/PCBM bulk heterojunction solar cells by photoinduced absorption spectroscopy — •Stefan Voigt, Uladzimir Zhokhavets, Harald Hoppe, Gerhard Gobsch, Maher Al-Ibrahim, Oliver Ambacher, and Steffi Sensfuss
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16:30 |
HL 50.51 |
Field Effect Mobility of the Polymer Poly(3-Hexyl Thiophene) — •Maria Hammer, Carsten Deibel, Vladimir Dyakonov, and Ingo Riedel
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16:30 |
HL 50.52 |
Microresonators based on SOI for optical bio-sensory applications — •Dominic Dorfner, Felix Hofbauer, Andreas Kress, Marc Tornow, Jon Finley, and Gerhard Abstreiter
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16:30 |
HL 50.53 |
Anisotropic Light Emission of Quantum Dots in Photonic Crystals — •Rebecca Wagner, Michael Barth, and Frank Cichos
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16:30 |
HL 50.54 |
Design, fabrication and characterization of microcavity OLED structures — •Hannes Gothe, Robert Gehlhaar, Hartmut Fröb, Vadim G. Lyssenko, and Karl Leo
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16:30 |
HL 50.55 |
Conventional pillar-type and novel pyramidal III-V microcavities: Fabrication and characterization — •M. Karl, W. Löffler, J. Lupaca-Schomber, T. Passow, S. Li, F. Perez-Willard, J. Hawecker, D. Gerthsen, H. Kalt, C. Klings-hirn, and M. Hetterich
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16:30 |
HL 50.56 |
PAC studies with LSO scintillation crystals — •Riccardo Valentini and Reiner Vianden
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16:30 |
HL 50.57 |
Waveguide and sensor systems comprising metamaterial elements — •M. Shamonin, A. Radkovskaya, C.J. Stevens, G. Faulkner, D.J. Edwards, O. Sydoruk, O. Zhuromskyy, E. Shamonina, and L. Solymar
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16:30 |
HL 50.58 |
Ground State of Electron on Short-Range Potential in Two Dimensional Structure in Magnetic Field — •Tatiana Pavlova
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16:30 |
HL 50.59 |
An all-Electron GW Code Based on FP-(L)APW+lo — •Ricardo I. Gomez-Abal, Xinzheng Li, and Matthias Scheffler
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16:30 |
HL 50.60 |
Ab initio calculation of electronic properties for dangling bond free nitridated silicon — •Philipp Plänitz, Alberto Martinez-Limia, Mohammed Bouhassoune, and Christian Radehaus
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16:30 |
HL 50.61 |
Time-dependent density functional theory in the non-adiabatic regime — •Günther Schwarz, Ilya V. Tokatly, and Oleg Pankratov
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16:30 |
HL 50.62 |
Spin-Dependent GW Approximation with Application to MnO — •Claudia Rödl, Patrick Hahn, Jürgen Furthmüller, and Friedhelm Bechstedt
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16:30 |
HL 50.63 |
Structural and Electronic Properties of ZnO and CdO polymorphs — •Andre Schleife, Frank Fuchs, and Friedhelm Bechstedt
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16:30 |
HL 50.64 |
Energy spectrum of strongly correlated electrons and indirect excitons in quantum dots — •Karsten Balzer, Christoph Nölle, Michael Bonitz, and Alexei Filinov
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16:30 |
HL 50.65 |
CYLINDRIC RESONATORS WITH COAXIAL BRAGG-REFLECTORS — •R. Schmidt-Grund, T. Gühne, H. Hochmut, B. Rheinländer, A. Rahm, V. Gottschalch, J. Lenzner, and M. Grundmann
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16:30 |
HL 50.66 |
FIR spectroscopy of single quantum dots fabricated by AFM — •Steffen Groth, Kevin Rachor, Carsten Graf von Westarp, Can-Ming Hu, and Detlef Heitmann
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16:30 |
HL 50.67 |
Coherence properties of the resonance fluorescence from GaAs Quantum Wells — •Gerolf Burau, Birger Seifert, and Heinrich Stolz
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16:30 |
HL 50.68 |
Optical beam indal npn-structure junction devicesuced current measurements at planar two-dimension — •C. Werner, D. Reuter, and A.D. Wieck
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16:30 |
HL 50.69 |
Resonant Raman scattering in Cu2O — •Jan Brandt, Dietmar Fröhlich, Christian Sandfort, Manfred Bayer, and Heinrich Stolz
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16:30 |
HL 50.70 |
Calculation of optical mode energies and field distributions in micron-sized semiconductor ring resonators — •Ch. Strelow, T. Kipp, and D. Heitmann
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16:30 |
HL 50.71 |
Transport investigation on ZnO Nanowires — •T. Lüdtke, J. M. Becker, R. J. Haug, M. Kreye, and A. Waag
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16:30 |
HL 50.72 |
Self-Assembly of Nitride Nanowires grown by MBE — •Ratan Debnath, Ralph Meijers, Thomas Richter, Toma Stoica, Raffaella Calarco, Michel Marso, and Hans Lüth
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16:30 |
HL 50.73 |
Structural and electronic properties of morphological transformed InAs quantum dots — •Andreas Schramm, Jan Schaefer, Fabian Wilde, Tobias Kipp, Stephan Schulz, Christian Heyn, and Wolfgang Hansen
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16:30 |
HL 50.74 |
Constant capacitance deep level transient spectroscopy on InAs quantum Dots — •Jan Schaefer, Andreas Schramm, Stephan Schulz, Christian Heyn, and Wolfgang Hansen
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16:30 |
HL 50.75 |
Deposition and epitaxial overgrowth of colloidal nanocrystals on ZnSe surfaces — •Dirk Mügge, Christof Arens, Detlef Schikora, Klaus Lischka, Oliver Schöps, Ulrike Woggon, and Mikhail V. Artemyev
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16:30 |
HL 50.76 |
Constant capacitance deep level transient spectroscopy on InAs quantum Dots — •Jan Schaefer, Andreas Schramm, Stephan Schulz, Christian Heyn, and Wolfgang Hansen
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16:30 |
HL 50.77 |
Raman study of CdSe core/shell nanorods — •N. Tschirner, M. Machon, U. Woggon, M.V. Artemyev, and C. Thomsen
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16:30 |
HL 50.78 |
Modeling the growth of quantum dot stacks via kinetic Monte Carlo simulations — •Roland Kunert and Eckehard Schöll
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16:30 |
HL 50.79 |
Positioning of self-assembled InAs quantum dots by focused ion beam implantation — •Minisha Mehta, Alexander Melnikov, Dirk Reuter, and Andreas D. Wieck
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16:30 |
HL 50.80 |
Top-down fabrication of GaAs/AlAs nanocolumns with lateral dimensions in the sub-100nm range — •Jakob Wensorra, Mihail Ion Lepsa, Klaus Michael Indlekofer, Arno Förster, and Hans Lüth
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16:30 |
HL 50.81 |
Synthesis and characterization of CdS nanowires — •Jens Böttcher, Marko Burghard, and Klaus Kern
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16:30 |
HL 50.82 |
Optical properties and structure of CdP4 nanoclusters in zeolite Na-X and fabricated by laser ablation — •Oleg Yeshchenko
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16:30 |
HL 50.83 |
Excitons and band behavior in ultrasmall nanoclusters. — •Anton Grygoriev and Vladimir Litovchenko
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16:30 |
HL 50.84 |
Coherence time of single photons from laterally coupled InGaAs/GaAs quantum dot molecules — •Serkan Ates, Sven M. Ulrich, Mohamed Benyoucef, Armando Rastelli, Lijuan Wang, Oliver G. Schmidt, and Peter Michler
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16:30 |
HL 50.85 |
Theory of Optical Dephasing in Semiconductor Quantum Dots — •Carsten Weber, Matthias Hirtschulz, and Andreas Knorr
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16:30 |
HL 50.86 |
The role of non-equilibrium phonons for the optically induced dynamics in quantum dots — •Annette Krügel, Vollrath Martin Axt, and Tilmann Kuhn
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16:30 |
HL 50.87 |
Multiphonon Raman scattering of spherical PbSe quantum dots — •J. T. Devreese, S. N. Klimin, V. M. Fomin, and F. W. Wise
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16:30 |
HL 50.88 |
Single electron quantum dot in a spatially periodic magnetic field — •Daniel Buchholz and Peter Schmelcher
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16:30 |
HL 50.89 |
Single photon emission from CdSe/ZnSe quantum dots — •Christian Peitzmeyer, Steffen Michaelis deVasconcellos, Patrick Ester, Christof Arens, Dirk Mügge, Artur Zrenner, Detlef Schikora, and Klaus Lischka
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16:30 |
HL 50.90 |
Energy transfer processes in ensembles of CdSe quantum dots of different sizes — •M. Rohe, M. Grau, P.J. Klar, W. Heimbrodt, M. Yosef, and S. Schlecht
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16:30 |
HL 50.91 |
Influence of an in-plane electric field on the photoluminescence of single InGaAs/GaAs quantum dots — •Moritz Vogel, Sven M. Ulrich, Lijuan Wang, Armando Rastelli, Oliver G. Schmidt, and Peter Michler
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16:30 |
HL 50.92 |
Observation of Multi-exciton Transitions in Individual Quantum Dot Molecules — •Emily Clark, Hubert J. Krenner, Toshihira Nakaoka, Matthias Sabathil, Max Bichler, Yasuhiko Arakawa, Gerhard Abstreiter, and Jonathan J. Finley
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16:30 |
HL 50.93 |
Lateral and vertical electric field applied to Self-Assembled QDs — •V. Stavarache, D. Reuter, A. D. Wieck, R. Oulton, and M. Bayer
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16:30 |
HL 50.94 |
Highly resonant Raman spectroscopy of InAs quantum dots — •Tim Köppen, Thomas Brocke, Tobias Kipp, Andreas Schramm, Christian Heyn, and Detlef Heitmann
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16:30 |
HL 50.95 |
Engineering the multi-exciton spectra in wurtzite InN/GaN quantum dots — •Norman Baer, Stefan Schulz, Stefan Schumacher, Paul Gartner, Gerd Czycholl, and Frank Jahnke
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16:30 |
HL 50.96 |
Size dependence of quantum confinement effects in HgTe nanocrystals determined by spectroscopic ellipsometry — •Veronika Rinnerbauer, Maksym Kovalenko, Ventsislav Lavchiev, Wolfgang Heiss, and Kurt Hingerl
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16:30 |
HL 50.97 |
Lateral Features of Cu(InGa)Se2-Heterodiodes by Submicron Resolved Simultaneous Luminescence and Light Beam Induced Currents — •Levent Gütay, Tim Jürgens, and Gottfried Heinrich Bauer
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16:30 |
HL 50.98 |
Computer modelling of gettering under conditions of rapid thermal processing — •Carsten Rudolf, Michael Seibt, and Vitaly Kveder
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16:30 |
HL 50.99 |
Study of bulk defects in CuIn1−xGaxSe2 based solar cells — •Verena Mertens, Jürgen Parisi, Robert Kniese, Marc Köntges, and Rolf Reineke-Koch
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|
16:30 |
HL 50.100 |
Lattice parameters of CuAu- and chalcopyrite-phase of epitaxial CuInS2 on silicon substrates — •Janko Cieslak, Thomas Hahn, Jürgen Kräußlich, Heiner Metzner, Jens Eberhardt, Mario Gossla, Udo Reislöhner, and Wolfgang Witthuhn
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16:30 |
HL 50.101 |
Hillock formation in epitaxial Cu(In,Ga)S2 thin films — •Thomas Hahn, Janko Cieslak, Jens Eberhardt, Mario Gossla, Heinrich Metzner, Udo Reislöhner, Kristian Schulz, and Wolfgang Witthuhn
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16:30 |
HL 50.102 |
2. A comparative photoluminescence study on CuInS2 absorber layers for solar cell applications from a rapid thermal process and from RF reactive sputtering — •Tobias Enzenhofer, Thomas Unold, Klaus Ellmer, and Hans-Werner Schock
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16:30 |
HL 50.103 |
SILAR conditioning of TiO_2 / In(OH)_xS_y / PbS(O) structures — •Ilona Oja, Sergej Gavrilov, Bianca Lim, Abdelhak Belaidi, Larissa Dloczik, Martha Ch. Lux-Steiner, and Thomas Dittrich
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16:30 |
HL 50.104 |
III-V materials for multi-junction solar cells on the lattice constant of InP — •Ulf Seidel, H.-J. Schimper, U. Bloeck, K. Schwarzburg, F. Willig, and T. Hannappel
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16:30 |
HL 50.105 |
The Prospects of Development of Photoelectric Convertors by Using Solar Energy in Georgia — •Ia Trapaidze, Rafiel Chikovani, Tengiz Mkheidze, and Gela Goderdzishvili
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16:30 |
HL 50.106 |
Memory effects in MOS-structures containing nanoclusters — •M. Allardt, R. Pietzsch, J. Bollmann, J. Weber, and V. Beyer
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16:30 |
HL 50.107 |
Calculation of the direct tunneling current in a Metal-Oxide-Semiconductor structure with one-side open boundary — •Ebrahim Nadimi
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16:30 |
HL 50.108 |
Realization of logic circuits with in-plane gate transistors written using focused-ion-beam implantation — •M. Draghici, D. Reuter, and A. D. Wieck
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16:30 |
HL 50.109 |
Optical response of Ag-induced reconstructions on vicinal Si(111) — •Sandhya Chandola, J Jacob, K Fleischer, P Vogt, W Richter, and J McGilp
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