Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 56: Quantum dots and wires: Preparation and characterization III

HL 56.7: Talk

Friday, March 31, 2006, 12:30–12:45, POT 51

Self-organization of InAs-quantum dots: kinetics, strain, and intermixing — •Christian Heyn — Institut für Angewandte Physik, Universität Hamburg, Jungiusstr. 11, 20355 Hamburg

The basic mechanisms of the self-assembly process which leads to the formation of InAs quantum dots will be addressed. Our goal is to develop a simple model of strain-induced quantum dot formation, that allows to directly determine correlations between structural features of the quantum dots and the growth parameters applied. In doing so, the major task is to identify and model the key processes controlling quantum dot formation such as the kinetics of rearrangement of material by surface diffusion, intermixing of the deposit with substrate material, and the influence of the strain energy. This presentation discusses results calculated with a rate equations based growth model and the related experimental behavior.