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11:00 |
HL 56.1 |
Understanding Growth of InAs/GaAs Quantum Dot Nanostructures in Atomic Detail — •Thomas Hammerschmidt, Peter Kratzer, and Matthias Scheffler
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11:15 |
HL 56.2 |
Strain-enhanced charge carrier confinement in nanostructures fabricated by cleaved edge overgrowth — •Jörg Ehehalt, Robert Schuster, Christian Gerl, Harald Hajak, Elisabeth Reinwald, Matthias Reinwald, Dieter Schuh, Werner Wegscheider, Max Bichler, and Gerhard Abstreiter
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11:30 |
HL 56.3 |
Atomic structure of GaSb/GaAs quantum rings and dots studied by cross-sectional scanning tunneling microscopy — •Rainer Timm, Andrea Lenz, Lena Ivanova, Holger Eisele, Ganesh Balakrishnan, Diana Huffaker, and Mario Dähne
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11:45 |
HL 56.4 |
Stacking of InGaAs/GaAs-based quantum dots for long-wavelength laser diodes — •Tim David Germann, André Strittmatter, Thorsten Kettler, Kristijan Posilovic, and Dieter Bimberg
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12:00 |
HL 56.5 |
Growth and characterization of self-assembled CdSe quantum dots in MgS barriers — •Arne Gust, Carsten Kruse, Henning Lohmeyer, Kathrin Sebald, and Jürgen Gutowski
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12:15 |
HL 56.6 |
Influence of Indium-free sublayers on the formation of self-assembled quantum dots on InP (001) substrates — •Roland Enzmann, Susanne Dachs, Ralf Meyer, and Markus-Christian Amann
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12:30 |
HL 56.7 |
Self-organization of InAs-quantum dots: kinetics, strain, and intermixing — •Christian Heyn
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12:45 |
HL 56.8 |
Growth-related structure of InAsN/GaAs quantum dots studied by cross-sectional scanning tunneling microscopy and spectroscopy — •L. Ivanova, H. Eisele, R. Timm, A. Lenz, M. Dähne, O. Schumann, L. Geelhaar, and H. Riechert
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13:00 |
HL 56.9 |
Atomic structure of unstrained GaAs/AlGaAs quantum dots — •Andrea Lenz, Rainer Timm, Lena Ivanova, Dominik Martin, Vivien Vossebürger, Holger Eisele, Armando Rastelli, Oliver Schmidt, and Mario Dähne
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