Dresden 2006 – scientific programme
Parts | Days | Selection | Search | Downloads | Help
HL: Halbleiterphysik
HL 5: SiC
Monday, March 27, 2006, 12:15–13:00, BEY 154
 |
12:15 | HL 5.1 | Electronic Raman Scattering of Phosphorus Donors in Silicon Carbide — •Martin Hundhausen, Roland Puesche, and Lothar Ley |
|
12:30 | HL 5.2 | Electronic properties of the 2x1 3C-SiC surface reconstruction studied with resonant photoemission — •Massimo Tallarida, Rakesh Sohal, and Dieter Schmeisser |
|
12:45 | HL 5.3 | Kinetic mechanisms for the deactivation of nitrogen — •Alexander Mattausch, Michel Bockstedte, and Oleg Pankratov |