Dresden 2006 – scientific programme
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HL: Halbleiterphysik
HL 6: Quantum dots and wires: Transport properties I
HL 6.2: Talk
Monday, March 27, 2006, 10:30–10:45, BEY 118
Low temperature electronic transport in vertical sub-100 nm resonant tunneling diodes — •Mihail Ion Lepsa1, Klaus Michael Indlekofer1, Jakob Wensorra1, Arno Förster2, and Hans Lüth1 — 1Institut für Schichten and Grenzflächen (ISG1) und Center of Nanoelectronic Systems for Information Technology (CNI), Forschungszentrum Jülich GmbH, 52425 Jülich — 2Fachhochschule Aachen, Abteilung Jülich, Physikalische Technik, Ginsterweg 1, 52428 Jülich
Using a top down approach, vertical GaAs/AlAs resonant tunneling diodes (RTD) with lateral dimensions down to 50 nm have been processed.
DC electrical measurements at very low temperatures have been carried out both in linear and nonlinear regimes. Investigations at room temperature have already shown that the electronic transport properties in these nanodevices are strongly influenced by the lateral depletion region, leading to a new interesting behavior [1]. The actual study allows to evaluate the suggested quantum collimation model, which was used to explain qualitatively the room temperature transport characteristics of the sub-100 nm RTDs.
[1] J. Wensorra, K. M. Indlekofer, M. I. Lepsa, A. Förster, and H. Lüth, Nano Letters, DOI: 10.1021/nl051781a.