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HL: Halbleiterphysik

HL 6: Quantum dots and wires: Transport properties I

HL 6.5: Vortrag

Montag, 27. März 2006, 11:15–11:30, BEY 118

Resonances in the transport through one-dimensional constrictions in silicon based MOS field effect transistors — •Carsten Kentsch, Wolfgang Henschel, and Dieter Kern — Institut für Angewandte Physik, Auf der Morgenstelle 10, 72076 Tübingen

Recently silicon has attracted attention towards the realization of spin based qubits as its main isotope has no nuclear spin and therefore a reduced probability of scattering with the base material can be expected. Spin-polarized electrons exist in the edge-states of two-dimensional electron gases at high magnetic fields. They are individually accessible by suitable constrictions and therefore can be useful to study the scattering between the spin-states by measuring electric current.

Hall-bar devices consisting of a silicon MOS field effect transistor with embedded split-gates below the top gate have been fabricated and characterized at. 1.5 Kelvin and magnetic fields of up to 8 Tesla. Transport through constrictions induced by the split gates shows fluctuations which can be interpreted as the effect of transmission resonances in a one-dimensional channel of a length comparable with the split-gate dimensions.