Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.10: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Self-built molecular beam epitaxy system for III - V semiconductors — •K. Trounov, I. Kamphausen, D. Reuter, and A. D. Wieck — Lehrstuhl fuer Angewandte Festkoerperphysik, Ruhr-Universitaet Bochum, Universitaetsstr. 150, D-44780 Bochum

We are setting up an MBE system for the growth of III-V semiconductor heterostructures. The system is completely in-house designed and fabricated. It consists of three chambers: a load lock, a buffer chamber, and the main chamber. We will discuss design considerations as e.g. the shutter mechanism and the materials choice for the individual components. The present status of the system will also be discussed.