Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.13: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Low-temperature scanning tunneling microscopy on semiconductor samples grown by molecular beam epitaxy — •Selina Olthof, Oguzhan Gürlü, Giovanni Costantini, Armando Rastelli, Oliver G. Schmidt, M. Alexander Schneider, and Klaus Kern — Max-Planck-Institut für Festkörperforschung, Heisenbergstr.1, D-70569, Stuttgart

The Scanning Tunneling Microscope (STM) is a powerful tool to analyze surfaces with atomic resolution as well as to perform local spectroscopy. Especially for the latter investigation, an instrument working at liquid helium temperatures gives superior access to the electronic structure of e.g. heterostructures and quantum dots. To be able to investigate semiconductor samples that are grown by Molecular Beam Epitaxy (MBE) in a home build low temperature UHV-STM, a battery operated vacuum system was build that allows sample transfer between separate chambers. As sample sizes in the STM are smaller than the 2” wafer standard used in semiconductor MBE, an adapter was designed that interferes as little as possible with the MBE growth procedure. First results of topographic and spectroscopic studies performed at 6 Kelvin on MBE-grown III-V heterostructures will be presented.