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HL: Halbleiterphysik

HL 9: Poster I

HL 9.14: Poster

Montag, 27. März 2006, 15:15–17:45, P3

Carrier relaxation dynamics in annealed and hydrogenated (GaIn)(NAs)/GaAs quantum wells — •Torben Grunwald¹, Kristian Hantke¹, Jörg D. Heber¹, Sangam Chatterjee¹, Peter J. Klar¹, Kerstin Volz¹, Wolfgang Stolz¹, Antonio Polimeni², Mario Capizzi², and Wolfgang Rühle¹ — ¹Faculty of Physics and Material Sciences Center, Philipps-Universität Marburg, Renthof 5, D-35032 Marburg, Germany — ²CNISM-Dipartimento di Fisica, Universitá di Roma, Piazzale A. Moro 2, I-00182 Roma, Italy

We measured time-resolved photoluminescence on as-grown, annealed, as well as annealed and hydrogenated (Ga_0.7In_0.3)(N_0.006As_0.994)/GaAs quantum well structures. The post-growth treatment changes not only the photoluminescence decay time but also the intensity of photoluminescence directly after excitation. This initial luminescence intensity is determined by a competition between relaxation of electrons into nitrogen related potential fluctuations in the conduction band and their capture by deep traps. In contrast, the decay of the photoluminescence is mainly determined by the competition between radiative and nonradiative recombination, which are both influenced by localization. Annealing decreases localization effects and nonradiative recombination. Hydrogenation also reduces localization effects but increases nonradiative recombination.