Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.21: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Magnetotransport of p-type and n-type (B,Ga,In)As — •J. Teubert¹, P. J. Klar¹, W. Heimbrodt¹, and V. Gottschalch² — ¹Dept. Physics and WZMW, Philipps-University, Germany — ²Faculty of Chemistry and Mineralogy, University of Leipzig, Germany

We present magnetoresistance (MR) measurements on p-type and n-type (B,Ga,In)As in fields up to 10 T and at temperatures down to 2 K. The samples were grown by MOVPE with B and In contents of 2,7% and 6%, respectively, and with different carrier concentrations. The MR results will be compared with those of (Ga,In)(N,As). Both, the incorporation of N and B forms highly localized energy levels resonant with the conduction band leading to an interaction of these localized levels with the extended conduction band states. In the case of N, one observes strong level-repulsion effects and thus a strong red-shift of the fundamental band gap. B seems to have much less influence on the conduction band structure compared to N, e.g. no significant reduction of the band gap was observed and only an increase of effective electron mass was found. Despite the difference in band-structure modification due to B and N, it is surprising that the MR results of (B,Ga,In)As show many similarities to those of (Ga,In)(N,As) e.g. strong Anderson localization effects for n-type samples.