Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.25: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Investigation of ZnO layers obtained by RBQE method — •Lia Trapaidze, Tamaz Butkhuzi, Tamar Khulordava, Lia Aptsiauri, Eka Kekelidze, Maia Sharvashidze, and Giorgi Natsvlishvili — Tbilisi State University, Dep. of Physics, 3 Chavchavadze Ave, 0128, Tbilisi, Georgia

Wide band semiconductors are interesting materials for obtaining of the light-emitting diodes in the violet and ultraviolet area, solid-state lasers and other electro optic systems. We elaborated non-equilibrium method Radical Beam Epitaxy (RBE), which gives us a possibility to regulate effectively electro-optical characteristics of the wide band semiconductors. Using RBQE method it is possible to get p-type, n-type and isolate layers of ZnO and p-n junction of the basis of ZnO/ZnO. By means of RBE method ZnO layers were grown on the basis of ZnO. The temperature of treatment was 400 C, duration was 4 hours. We measured I-V characterization, after them we obtained p-n junction. In the ultraviolet part of the PL spectra of ZnO epitaxial layers we observed intense peaks and the visible part were reduced. Observation of acceptor bound exciton in ZnO layers obtained by RBQE are characterized by high purity and perfection structure and significantly reduced number of point defect, what is one of the most important problems. For structural characterization of ZnO, new layers were checked with a Siemens D5000 XRD (X-Ray diffraction) spectrometer.