Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 9: Poster I
HL 9.29: Poster
Montag, 27. März 2006, 15:15–17:45, P3
The influence of native and impurity defects on the formation of radiative centres in ZnSe crystals — •Vadim Sirkeli, Galina Ivanova, Dmitrii Nedeoglo, and Natalia Nedeoglo — Moldova State University, Department of Physics, A. Mateevici str. 60, Chisinau, MD-2009 Moldova
Photoluminescence spectra of both as-grown ZnSe crystals and the crystals doped with Au from Zn+Au or Se+Au melt have been investigated. It is established that gold-doping from Zn+Au melt leads to the formation of both simple Aui donor and AuZn acceptor defects. Associative radiative centres (AuZn-Aui) and (AuZn-D) are also formed. The edge luminescence of the crystals is attributed to radiative annihilation of Aui and VSe donor-bound excitons. The luminescence spectra of ZnSe crystals doped with Au from Se+Au melt contain only one narrow line, which is ascribed to radiative annihilation of AuZn acceptor-bound excitons. It is shown that the process of the formation of Aui donor or AuZn acceptor defects and their complexes with native defects can be controlled by changing the composition of annealing medium. The observed variations of radiative properties for gold-doped ZnSe crystals are explained by amphoteric properties of gold impurity and its ability to form the complexes with native defects.