Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.31: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Growth and Doping of ZnO Nanostructures on Different Substrate Materials — •Anton Reiser, Günther M. Prinz, Martin Schirra, Andreas Ladenburger, Martin Feneberg, Rolf Sauer, and Klaus Thonke — Abt. Halbleiterphysik, Universität Ulm, 89069 Ulm

Growth of ZnO nanostructures either by vapor-liquid-solid epitaxy (VLSE) or by modified chemical vapor deposition (CVD) is investigated. Variation of the growth parameters such as temperature of the sample, temperature and composition of the source materials, flow of the transport gas, oxygen supply etc. allows to control preferential growth of specific ZnO nanostructures. Different substrates, as e.g. a-, r-, c-plane sapphire, silicon, and gallium nitride, affect the structure and the optical properties of the resulting nanostructures. We study the doping of such nanostructures, either directly in the growth process, by adding suitable materials to the sources, by using different catalyst materials, or by ion implantation of the as-grown structures. The crystalline quality and the optical properties of the nanostructures as grown and after subsequent process steps are monitored by SEM images and x-ray analysis, by micro-Raman measurements, by photoluminescence, and by field emitter type SEM cathodoluminescence spectroscopy.