Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 9: Poster I
HL 9.32: Poster
Montag, 27. März 2006, 15:15–17:45, P3
Impact of As-doping on the optical properties of ZnO — •Martin Noltemeyer, Frank Bertram, Thomas Hempel, Silke Petzold, Jürgen Christen, Sören Giemsch, Armin Dadgar, and Alois Krost — Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg, Germany
We present results from the optical and structural characterization of heteroepitaxial grown ZnO which was doped with arsenic. The samples were grown by metal organic vapor phase epitaxy (MOVPE) on GaN/sapphire templates. For doping experiments the layers were doped with arsenic using different AsH3-flows ranging from 0.0005-0.5 sccm. An un-doped reference samples is grown for comparison. In the low temperature (T = 4.2K) photoluminescence spectrum the free exciton X, the bound exciton lines I0/I1, I2/I3, and I8, as well as the 1st and 2nd LO phonon replica from I8 can be easily identified. In addition, the TES-I8 line can be observed. With increasing the AsH3-flow all excitonic lines broaden and significantly decrease in intensity. In particular I2/I3 completely disappears. As a more prominent feature, a distinguished donor acceptor pair recombination band (DAP) shows up with As-doping at 3.23 eV exhibiting up to 6 well resolved LO phonon replicas. Spatially and spectrally resolved cathodoluminescence measurements give a direct correlation of structural and optical properties of these layers.