Dresden 2006 – wissenschaftliches Programm

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.33: Poster

Montag, 27. März 2006, 15:15–17:45, P3

Doping of ZnS monocrystals by P ions — •Aptsiauri Lia, Kekelidze Eka, Trapaidze Lia, and Butkhuzi Tamaz — Tbilisi State University, Chavchavadze ave.3, 0128, Tbilisi Georgia

. ZnS belongs to a class of materials that can be easily doped only n-type, but to obtain samples with low ohmic is considered to be difficult mainly because of intense compensating processes, which are widely investigated. In the present work in order to obtain hole conductivity in ZnS by phosphorus doping and to identify the centers that are responsible for the increase of hole concentration as well as the centers compensating the conductivity we carried out implantation of ZnS mono-crystals by P ions. Initial mono-crystals were of electric conductivity. After implantation the samples were annealed under preliminary deposited gold layers in nitrogen atmosphere. The lowest resistivity was obtained We carried out Thermodynamic analysis for ZnS-P. We defined defects and carriers as a function of zinc vacancies concentration. Thermodynamic analysis showed that difficulty of doping is conditioned by the fact that area of hole conductivity is too narrow and at high temperatures it may even disappear.