Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
HL: Halbleiterphysik
HL 9: Poster I
HL 9.35: Poster
Montag, 27. März 2006, 15:15–17:45, P3
Hydrogen-related shallow donors in zinc oxide studied by infrared absorption and photoconductivity — •F. Börrnert, E. V. Lavrov, and J. Weber — Technische Universität Dresden, 01062 Dresden, Germany
Zinc oxide samples grown from vapor phase and treated with hydrogen and/or deuterium plasma were studied by means of infrared absorption spectroscopy and photoconductivity. Two electronic transitions were found in infrared absorption at 1430 and 1480 cm−1. These lines belong to the H-I defect which was tentatively associated with bond-centered hydrogen. The energies of these transitions rule out H-I as a candidate for the hydrogen-related shallow donor in zinc oxide. Electronic transitions of three independent hydrogen-related shallow donors were observed in the photoconductivity spectra at 180, 240, and 310 cm−1.