Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 9: Poster I
HL 9.47: Poster
Montag, 27. März 2006, 15:15–17:45, P3
Characterization of thin sol-gel-deposited high-k zirconia (ZrO2) layers — •Peter Iskra1, Michel Kazempoor2, Gerhard Lilienkamp1, and Winfried Daum1 — 1Institut für Physik und Physikalische Technologien, TU Clausthal — 2Institut für Schichten und Grenzflächen (ISG3), Forschungszentrum Jülich GmbH
Thin ZrO2 films have been deposited on silicon (100) with and without native oxide layers using the sol-gel process. The oxide thickness and surface morphology was determined by ellipsometry and AFM measurements. Auger depth profiles were used to characterize composition and interface reactions. We applied tunneling-AFM to evaluate the local thickness and electrical properties of the oxides. AFM measurements showed a roughness of the oxide layers which is comparable to the roughness of the substrates. By means of the depth profiles we found appropriate parameters for the sol-gel process such as composition of the sol, annealing temperature, and oxygen partial pressures which made the deposition of stoichiometric, carbon-free layers possible. The Auger depth profiles revealed that a thin interface layer of complex composition is formed and how the thickness of this layer depends on the annealing process. First attempts have been made to evaluate film characteristics such as thickness and homogeneity from tunneling-AFM images and tunneling I-V curves.