Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.4: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Electrical Characterization of AlInN / GaN heterostructures grown by MOVPE — •C. Baer, H. Witte, A. Krtschil, C. Hums, J. Blaesing, A. Dadgar, and A. Krost — Otto-von-Guericke-University Magdeburg, Postfach 4120, 39016 Magdeburg

AlInN/GaN-junctions are of special interest due to its possible application as p-type FETs for In concentrations above 32%. However, there is only rare information on the electrical properties of AlInN and AlInN/GaN heterostructures up to now. We have investigated AlInN/GaN grown on different buffer layer structures on sapphire or Si substrates by metal organic vapour phase epitaxy.

At first we investigated the influence of the different junctions on the electrical measurements. For instance, in Hall-effect and CV-measurements the properties of the GaN buffer layer were found to be dominant. In samples with thick and thin AlInN layers we found both n-type and p-type conductivity regions by Halleffect and CV-measurements as well as by scanning capacitance microscopy (SCM). The origin for the different conductivity types will be discussed in terms of the layer structure and various defects. Furthermore, the AlInN/GaN structures were characterized by photo-conductivity spectroscopy, optical and thermal admittance spectroscopy and by deep level transient spectroscopy with respect to the defects.