Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 9: Poster I
HL 9.51: Poster
Montag, 27. März 2006, 15:15–17:45, P3
Band Bending of Sulfur Passivated GaAs: A Raman Investigation — •Steve Pittner1, Gianina Nicoleta Gavrila2, Georgeta Salvan1, Axel Fechner1, Marion Friedrich 1, and Dietrich R. T. Zahn1 — 1Chemnitz University of Technology, Semiconductor Physics, D-09107 Chemnitz, Germany — 2BESSY GmbH, Albert-Einstein-Straße 15, D-12489 Berlin, Germany
In this work the influence of a wet chemical treatment using a solution of S2Cl2 + CCl4 (1:3) on GaAs(100) on the depletion layer thickness and band bending was investigated. Various excitation wavelengths were employed for taking Raman spectra under UHV conditions. The depletion layer thickness and band bending was calculated from the ratio of the coupled plasmon- LO phonon (PLP) mode and LO mode in the Raman spectra. The dependence on the information depth of different laser lines will be shown. N - and p-type doped GaAs are compared. The results are discussed in comparison to previous measurements [1,2] and it is illustrated that the improved treatment used leads to reduction of the depletion layer thickness and the band bending by approximately 60% for n-type GaAs. The importance of annealing steps in UHV are pointed out.
[1] Vasily N Bessolov, Mikhail V Lebedev, Nguyen Minh Binh, Marion Friedrich and Dietrich R T Zahn, Semicond. Sci. Technol. 13 (1998)
[2] L.A.Farrow, C.J. Sandroff, M.C. Tamargo, Appl. Phys. Lett., Vol. 51, No.23, 1931