Dresden 2006 – scientific programme

Parts | Days | Selection | Search | Downloads | Help

HL: Halbleiterphysik

HL 9: Poster I

HL 9.53: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Diluted magnetic semiconductors Sb(2-x)V(x)Te(3) — •Cestmir Drasar¹, Petr Lostak¹, Zhenhua Zhou², and Ctirad Uher² — ¹University of Pardubice, Studentska 95, 53210, Pardubice, Czech Republic — ²Unversity of Michigan,Ann Arbor, Michigan 48109, USA

Recently, a new type of diluted magnetic semiconductors based on the tetradymite-type structure was described [1,2]. In this contribution, we compare the transport and magnetic properties of Sb(2-x)V(x)Te(3) in the single crystalline form (x = 0.0-0.03) with the properties of thin films grown by MBE in which the content of vanadium is much higher (x = 0.0-0.35). It was found that the vanadium-doping in single crystals of Sb(2)Te(3) does not change the concentration of holes yet it gives rise to ferromagnetism at low temperatures. The Curie temperature T(C) increases with the vanadium content and reaches 22 K for a single crystal of Sb(1.97)V(0.03)Te(3). In the case of thin films of Sb(2-x)V(x)Te(3), the concentration of holes determined from the Hall effect increases with the increasing concentration of vanadium and the Curie temperature T(C)of a film with x = 0.35 reaches at least 177 K, the temperature comparable or higher than that obtained with Mn-doped GaAs.

1. J. S. Dyck, P. Hájek, P. Lošťák, and C. Uher, Phys. Rev. B 65, 115212 (2002). 2. Z. Zhou, Y.-J. Chien, and C. Uher, Appl. Phys. Lett. 87, 112503 (2005).