Dresden 2006 – scientific programme

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HL: Halbleiterphysik

HL 9: Poster I

HL 9.54: Poster

Monday, March 27, 2006, 15:15–17:45, P3

Molecular Beam Deposition of La₂O₃ as high-k gate dielectric — •Christian Wolff, Sandra Seidel, Andreas Assmuth, Oliver S. Senftleben, Tanja Stimpel-Lindner, Hermann Baumgärtner, and Ignaz Eisele — Institut für Physik, Fakultät für Elektrotechnik, Universität der Bundeswehr München, 85577 München-Neubiberg, Deutschland

One of the big challenges in the shrinking of CMOS devices approach is the gate insulator. To be able to follow the dimension shrinking according to the ITRS, the SiO₂ film thickness should drop below 1nm within the next few years. This means that the direct tunnel leakage current through the insulator will increase to an extent where a replacement for SiO₂ will be needed. The evolving near-term solutions for the gate dielectric problem are materials like silicon oxynitride or aluminium oxide. As a long-term solution with a dielectric constant between 20 and 30, we have studied the rare earth metal oxide La₂O₃. Lanthanum oxide thin films were grown on silicon substrate by molecular beam deposition. The deposition process in UHV was optimised investigating the influence of substrate temperature, the partial pressures of oxygen and ozone, respectively, and post-growth annealing. The La₂O₃ thin films grown with the developed processes have been electrically and physically characterised by I(U), C(U), XPS, AES and SEM measurements.