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HL: Halbleiterphysik

HL 9: Poster I

HL 9.60: Poster

Montag, 27. März 2006, 15:15–17:45, P3

Hall effect measurements at high temperatures in highly resistive materials (CaF₂) — •Thomas Geruschke¹, Peter Blaum², and Reiner Vianden¹ — ¹Helmholtz-Institut für Strahlen und Kernphysik Universität Bonn, Nußallee 14-16, 53115 Bonn — ²Schott AG, Dept.: "Research and Technology Development/Materials Development-Glass Ceramics", 55122 Mainz

In photolithography for integrated circuit fabrication narrower printed linewidths is achieved by moving to shorter wavelengths. For 157 nm lithography fluorine excimer lasers are used. In process the high energetic laser photons damage the crystallattice of the calcium fluoride lenses. This leads to a change of the optical properties of the material. With Hall effect techniques we try to investigate these defects. Therefore a Hall apparatus for measurements at high temperatures is under construction. The results will be presented and discussed.