Dresden 2006 – wissenschaftliches Programm
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HL: Halbleiterphysik
HL 9: Poster I
HL 9.61: Poster
Montag, 27. März 2006, 15:15–17:45, P3
Ballistic and mode-controlled rectification in high-mobility Si/SiGe cross junctions — •Egmont Fritz1, Gang Qiao1, Ulrich Wieser1, Ulrich Kunze1, and Thomas Hackbarth2 — 1Werkstoffe und Nanoelektronik, Ruhr-Universität Bochum, D-44780 Bochum — 2DaimlerCrysler Forschungszentrum Ulm, Wilhelm-Runge-Straße 11, D-89081 Ulm
Mesoscopic multi-terminal junctions prepared from high-mobility semiconductor field-effect heterostructures have attracted much attention in order to study ballistic electron transport. Here we report on the observation of ballistic rectification found in four-terminal Si/SiGe cross junctions. The Ψ-shaped junctions are composed of a central voltage stem and two current-injecting branches. The branches are directed towards the lower voltage probe of the stem and oppositely merge under zero injection angle into the stem. Electrical characterization of the rectifiers is performed at T = 4.2 K. The configuration of leads and voltage probes enables to separate between different mechanisms of rectification. The potential at the upper voltage probe displays a mode-controlled signal while the potential difference between both ends of the stem indicates a pure ballistic voltage. Nonlocal effects are studied in a modified cross junction with orthogonal current leads.